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| ZXTN25040DFH 40V, SOT23, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 4A VCE(sat) < 55 mV @ 1A RCE(sat) = 35 m PD = 1.25W Complementary part number ZXTP25040DFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * * * * High power dissipation SOT23 package High peak current High gain Low saturation voltage 130V forward blocking voltage 6V reverse blocking voltage E E C B Pinout - top view Applications * * * * * MOSFET gate drivers Power switches Motor control DC fans DC-DC converters Ordering information Device ZXTN25040DFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 1A4 Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25040DFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb = 25C(a) Linear derating factor Power dissipation at Tamb = 25C(b) Linear derating factor Power dissipation at Tamb = 25C(c) Linear derating factor Power dissipation at Tamb = 25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM P Limit 130 130 40 6 7 4 1 10 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25040DFH Characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25040DFH Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Symbol BVCBO Min. 130 130 40 7 6 6 Typ. 170 170 63 8.3 7.4 7.4 <1 50 20 100 Max. Unit V V V V V V nA A nA Conditions IC = 100 A IC = 100 A; RBE < 1k -1V < VBE < 0.25V IC = 10mA (*) IE = 100 A IE = 100 A, RBC < 1k or 0.25V > VBC > -0.25V IE = 100 A, VCB = 100V VCB = 100V, Tamb= 100C VCE = 100V; RBE < 1k or -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 40mA(*) IC = 4A, IB = 400mA(*) IC = 4A, IB = 400mA(*) IC = 4A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 4A, VCE = 2V(*) IC = 10A, VCE = 2V(*) MHz 20 pF ns ns ns ns 2%. Collector-emitter breakdown BVCEX voltage (forward blocking) Collector-emitter breakdown BVCEO voltage (base open) Emitter-base breakdown voltage BVEBO or Emitter-collector breakdown BVECX voltage (reverse blocking) Emitter-collector breakdown BVECO voltage (base open) Collector-base cut-off current ICBO Collector-emitter cut-off current Emitter-base cut-off current Collector-emitter saturation voltage ICEX IEBO VCE(sat) <1 45 120 135 140 50 55 210 210 190 1050 950 900 nA mV mV mV mV mV mV Base-emitter saturation voltage VBE(sat) 960 840 300 300 30 450 450 60 10 Base-emitter turn-on voltage VBE(on) Static forward current transfer ratio hFE Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 190 11.7 64 108 428 130 300 s; duty cycle IC = 50mA, VCE = 10V f = 100MHz VCB = 10V, f = 1MHz(*) VCC = 10V, IC = 1A, IB1 = IB2= 10mA NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25040DFH Typical characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25040DFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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